IndiumV3, Chine, Analysis, bibRecord, 000286

Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

Identifieur interne : 000286 ( Chine/Analysis ); précédent : 000285; suivant : 000287

Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

Auteurs : RBID : Pascal:13-0350498

Descripteurs français

Pascal (Inist)
- Dépôt plasma, Propriété électrique, Transistor couche mince, Oxyde d'indium, Oxyde de gallium, Oxyde de zinc, Couche mince, Pulvérisation haute fréquence, Mobilité Hall, Densité porteur charge, Spectre photoélectron RX, 8115J, 5277D, 7350, 8530T.

English descriptors

KwdEn :
- Carrier density, Electrical properties, Gallium oxide, Hall mobility, Indium oxide, Plasma deposition, Radiofrequency sputtering, Thin film transistors, Thin films, X-ray photoelectron spectra, Zinc oxide.

Abstract

Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O₂ plasma immersion has been examined. O₂ plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O₂ plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O₂ plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films.

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Pascal:13-0350498

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of O<sub>2 </sub>
plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films</title>
<author><name sortKey="Liu, P" uniqKey="Liu P">P. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>639798, Singapore</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>639798, Singapore</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chen, T P" uniqKey="Chen T">T. P. Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>639798, Singapore</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>639798, Singapore</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Liu, Z" uniqKey="Liu Z">Z. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials and Energy, Guangdong University of Technology</s1>
<s2>Guangzhou 510006</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guangzhou 510006</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tan, C S" uniqKey="Tan C">C. S. Tan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>639798, Singapore</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>639798, Singapore</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Leong, K C" uniqKey="Leong K">K. C. Leong</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>GlobalFoundries Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2</s1>
<s2>738406, Singapore</s2>
<s3>SGP</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>738406, Singapore</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0350498</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0350498 INIST</idno>
<idno type="RBID">Pascal:13-0350498</idno>
<idno type="wicri:Area/Main/Corpus">000535</idno>
<idno type="wicri:Area/Main/Repository">000F04</idno>
<idno type="wicri:Area/Chine/Extraction">000286</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term>
<term>Electrical properties</term>
<term>Gallium oxide</term>
<term>Hall mobility</term>
<term>Indium oxide</term>
<term>Plasma deposition</term>
<term>Radiofrequency sputtering</term>
<term>Thin film transistors</term>
<term>Thin films</term>
<term>X-ray photoelectron spectra</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt plasma</term>
<term>Propriété électrique</term>
<term>Transistor couche mince</term>
<term>Oxyde d'indium</term>
<term>Oxyde de gallium</term>
<term>Oxyde de zinc</term>
<term>Couche mince</term>
<term>Pulvérisation haute fréquence</term>
<term>Mobilité Hall</term>
<term>Densité porteur charge</term>
<term>Spectre photoélectron RX</term>
<term>8115J</term>
<term>5277D</term>
<term>7350</term>
<term>8530T</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O<sub>2</sub>
 plasma immersion has been examined. O<sub>2</sub>
 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O<sub>2</sub>
 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O<sub>2</sub>
 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films.</div>
</front>
</TEI>
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</fA03>
<fA05><s2>545</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Effect of O<sub>2 </sub>
plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LIU (P.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CHEN (T. P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LIU (Z.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>TAN (C. S.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LEONG (K. C.)</s1>
</fA11>
<fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s2>639798, Singapore</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>School of Materials and Energy, Guangdong University of Technology</s1>
<s2>Guangzhou 510006</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>GlobalFoundries Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2</s1>
<s2>738406, Singapore</s2>
<s3>SGP</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>533-536</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000504221210880</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>18 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0350498</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O<sub>2</sub>
 plasma immersion has been examined. O<sub>2</sub>
 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O<sub>2</sub>
 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O<sub>2</sub>
 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B50B77D</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C50J</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03F04</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Dépôt plasma</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Plasma deposition</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Transistor couche mince</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Thin film transistors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Oxyde de gallium</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Gallium oxide</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Galio óxido</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Thin films</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Mobilité Hall</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Hall mobility</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>8115J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>5277D</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>8530T</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>329</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
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Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri